Mitsubishi Electric Corporation has announced that it will begin shipping samples of recent gallium nitride (GaN) power amplifier module for use in 5G MIMO (multiple-input multiple-output) (mMIMO) base stations on September 21. The power amplifier modules help reduce power consumption of 5G mMIMO base stations.
Providing high-speed, large-capacity communications, 5G mobile networks are becoming increasingly popular across world, with their 5G mMIMO base stations installed predominantly in metropolitan areas. Since these base stations utilise multi-element antennas and a high number of power amplifiers, highly productive power amplifier modules play an important role reducing power consumption and manufacturing costs of these base stations. In addition, power amplifier module needs to deliver 3GPP-compliant low distortion characteristics over a large frequency range in order to be compatible with multiple countries’ networks.
Mitsubishi Electric will commence sample shipments of a GaN power amplifier module for 5G mMIMO base stations that can deliver an average output power of 8W (39 dBm) over large frequencies ranging from 3.4GHz (gigahertz) to 3.8GHz. The product is suitable for 64T64R mMIMO antennas because of its more than 43% high power-added productive operation.
The high productivity and low distortion result from Mitsubishi electric’s recent GaN High Electron Mobility Transistors (HEMTs). The wideband characteristics in addition to high productivity are realised using company’s original circuit design and high-density packaging techniques.
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