Mitsubishi Electric Corporation introduced what they claim to be the world’s first gallium nitride (GaN) power amplifier that achieves a frequency range of 3,400 MHz using a single power amplifier. The company has demonstrated this amplifier in 4G, 5G and beyond 5G/6G communication systems operating at different frequencies in a single base station.
The amplifier is expected to enable the radio unit (transceiver) to be shared for different communication systems and leads to more power-efficient base stations. Technical details are being presented at the IEEE International Microwave Symposium (IMS) 2023 this week.
Features of the amplifier
Novel frequency-compensated circuit achieves wideband operation
- The frequency range has been expanded to 3,400 MHz, six times that of a power amplifier released by the company on January 12, 2017, thanks to a novel frequency-compensated circuit for switching communication modes according to the frequency.
- Deployment of a single amplifier for 4G, 5G and beyond 5G/6G communication systems operating at different frequencies.
- Expanded bandwidth covering diverse frequencies is expected to enable the base station’s radio unit (transceiver) to be shared for multiple communication systems.
- Amplifier uses a high-performance GaN devices that achieve power efficiency.
- Maximum power efficiency of 62% in the frequency range of 3,400 MHz exceeds the level required for beyond 5G/6G to realise power-efficient base station.
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